Advancement and Challenges of Field Effect Transistors based on Multi-gate Transistor

The advancement and challenges of field effect transistors are based on multi-gate from the perspective structure material. Multi-gate field-effect (Multi-gate FET) have steeper sub-threshold slopes, which can reduce short channel improve mobility drive current. A fin transistor (FinFET) gate-all-around (GAAFET) attractive structures most compatible with today’s standard machining technologies. As future moves towards smaller processes, FinFET GAAFET processes limit spacing between n-to-p devices. In order to increase possibility miniaturization, innovative such as Forksheet FET Complementary-FET (CFET) been proposed.